The E(k) Relation for a Two-Band Scheme of Semiconductors and the Application to the Metal-Semiconductor Contact
β Scribed by H. Flietner
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 433 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0370-1972
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β¦ Synopsis
Abstract
The E(k) behaviour is calculated for a twoβband scheme as an approximation for the vicinity of the forbidden gap of a semiconductor. An estimate is given for the validity of the effective mass approximation in the forbidden gap. Application is made to the metalβsemiconductor contact and it is shown that this model describes the experiments for semiconductors ranging from covalent to the ionic type.
π SIMILAR VOLUMES
A two-step preconditioning strategy is presented for the conjugate gradient (CG) iterative method to solve a large system of linear equations resulting from the use of edge-based finite-element discretizations of Helmholtz equations. The key idea is to combine both the factorized sparse approximate