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The effects of the field dependence of carrier mobility on the validity of the gradual channel approximation in insulated-gate field-effect transistors

✍ Scribed by M.B. Bandali

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The Low-Field Mobility of Carriers in th

✍ I. A. Bocharova; M. P. Ryzhkov 📂 Article 📅 2001 🏛 Springer US 🌐 English ⚖ 24 KB

On the validity of the gradual channel a

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Field-dependent mobility effects in the

✍ Halladay, H.E.; van der Ziel, A. 📂 Article 📅 1967 🏛 IEEE 🌐 English ⚖ 217 KB

The transient response of insulated-gate

✍ Thomas J. O'Reilly 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 634 KB

A time-dependent numerical model of the

✍ M.S. Mock 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 630 KB

Current-voltage characteristics of the j

✍ Dang Luong Mo; Yanai, H. 📂 Article 📅 1970 🏛 IEEE 🌐 English ⚖ 837 KB