Registration markers are crucial in connecting scanning tunneling microscope (STM) lithographed nanoand atomic-scale devices to the outside world. In this paper we revisit an ultra high vacuum annealing method with a low thermal budget that is fully compatible with etched registration markers and re
The effects of strain on STM lithography on HS-ssDNA/Au (1 1 1) surface
β Scribed by Fan Chen; Anhong Zhou; Haeyeon Yang
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 797 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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β¦ Synopsis
Scanning tunneling microscopy (STM) lithography was utilized to investigate a 12-mer HS-ssDNA self-assembled Au (111) surface. Under low sample bias and high tunneling current, the repeated scanning resulted in the growth of nanostripes. The stripe orientation, the stripe width, and the spacer width between adjacent nanostripes were found to be dependent on their relative locations from dislocation points where two adjacent gold terraces overlap. The stripe and the spacer width also vary with the distance from these points. The results indicate that such stripes may reflect the strain distributions and the release pathway along the Au surfaces. The results also suggest that the presence of HS-ssDNA molecules enhances the lithography processes on the gold surface by acting as force transmitters.
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