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The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactor

✍ Scribed by W.C. Lan; C.D. Tsai; C.W. Lan

Publisher: Elsevier
Year: 2009
Tongue: English
Weight: 406 KB
Volume: 40
Category: Article
ISSN: 1876-1070
DOI: 10.1016/j.jtice.2008.12.008

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