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The effects of reorganization processes on two-dimensional cluster-cluster aggregation

โœ Scribed by Paul Meakin


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
597 KB
Volume
112
Category
Article
ISSN
0021-9797

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Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc