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The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy

✍ Scribed by D. M. Matlock; M. E. Zvanut; Haiyan Wang; Jeffrey R. Dimaio; R. F. Davis; J. E. van Nostrand; R. L. Henry; Daniel Koleske; Alma Wickenden


Book ID
107453442
Publisher
Springer US
Year
2005
Tongue
English
Weight
98 KB
Volume
34
Category
Article
ISSN
0361-5235

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