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The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

✍ Scribed by Frank H. Ruddy; John G. Seidel


Book ID
108223990
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
206 KB
Volume
263
Category
Article
ISSN
0168-583X

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The influence of an electrical field on the formation of defects in silicon particle detectors during particle irradiation was studied. Silicon pad detectors processed on Float Zone and Magnetic Czochralski silicon were irradiated with 7-MeV protons between the fluences of 5 Â 10 12 and 1.25 Â 10 13