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The effect of transition probability on the shape of X-ray photoelectron spectra of diamond and silicon

โœ Scribed by V.G. Aleshin; Yu.N. Kucherenko

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
350 KB
Volume
8
Category
Article
ISSN
0368-2048

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Effect of doping on the X-ray photoelect
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โœ J. Sharma; R.H. Staley; J.D. Rimstidt; H.D. Fair; T.F. Gora ๐Ÿ“‚ Article ๐Ÿ“… 1971 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 347 KB

Semiconductor X-ray photoelectron Line positions are unaffected by changes in the snmplc's bulk Fermi level produced by doping. This is interpreted to result from pinning of the Fermi level at the surface by contaminnnts independent of tbc bulk Fermi level.