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The Effect of the Lateral and Longitudinal Spread of Fast Protons on Strain Production in GaP and GaAs

โœ Scribed by Geist, V. ;Stephan, D. ;Fink, D.

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
346 KB
Volume
117
Category
Article
ISSN
0031-8965

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โœ Yoshio Watanabe; Fumihiko Maeda ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 389 KB

## ลฝ . We employed surface sensitive photoelectron spectroscopy PES using synchrotron radiation to investigate the strain of both deposited InAs and GaAs substrates with and without Se-termination. The two distinct chemical components `comprising Ga As bonding and In As bonding states in the As 3d