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The effect of surface proximity on electron transport through ultra-shallow -doped layers in silicon

✍ Scribed by W.R. Clarke; X.J. Zhou; A. Fuhrer; T.C.G. Reusch; M.Y. Simmons


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
263 KB
Volume
40
Category
Article
ISSN
1386-9477

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