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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

✍ Scribed by L. Kaabi; B. Remaki; C. Gontrand; P.F. Lo; B. Balland


Book ID
113287438
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
490 KB
Volume
112
Category
Article
ISSN
0168-583X

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