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The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction

✍ Scribed by Liu, Shu-Yi; Chen, Tao; Jiang, Yu-Long; Ru, Guo-Ping; Qu, Xin-Ping

Book ID
120001415
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
696 KB
Volume
105
Category
Article
ISSN
0021-8979

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Well-aligned zinc oxide (ZnO) nanorod structures were grown on ZnO-coated (seed layer) glass substrates using a simple and low-cost aqueous solution method at a growth temperature of $70 1C. The physical properties were examined at room temperate using appropriate techniques. After preliminary analy