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The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS

✍ Scribed by P. K. McLarty; D. E. Ioannou; H. L. Hughes


Book ID
112816329
Publisher
Springer US
Year
1990
Tongue
English
Weight
356 KB
Volume
19
Category
Article
ISSN
0361-5235

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