## Abstract A very simplified model of atomic‐scale etch pitting during sputtering erosion for composition depth profiling is used to modify the Benninghoven–Hofmann approach to layer‐by‐layer sputtering. It is shown that analytically tractable defining equations result, with solutions that indicat
The effect of parameter choice on predicted depth resolution in sputter profiling
✍ Scribed by G. Carter; M.J. Nobes; I.V. Katardjiev; J.J. Jiménez-Rodríguez; I. Abril; A. Gras-Martí
- Book ID
- 113283179
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 382 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0168-583X
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