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The effect of oxygen flooding on the secondary ion yields of matrix and impurity species in InP and InGaAs

✍ Scribed by AE Waddilove; A Chew; DE Sykes


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
389 KB
Volume
44
Category
Article
ISSN
0042-207X

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The production and annealing of oxygen and carbon related defects in electron-irradiated Ge-doped Czochralski silicon have been studied by means of IR spectroscopy. The results demonstrate that the role of Ge changes with increasing Ge content. At low Ge concentrations, much less than 10 20 cm Γ€3 ,