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The effect of orientation and lamellar structure on the plastic behavior of TiAl crystals

✍ Scribed by Y. Umakoshi; T. Nakano; T. Yamane


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
782 KB
Volume
152
Category
Article
ISSN
0921-5093

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density increases, the resistivity change must not result from electron scattering by dislocation strain field. The most plausible explanation for the observed resistivity change is electron scattering by interstitial impurity atoms. Ang and Wertc6) give the following