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The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2–HfO2 stacks and Au nanocrystals

✍ Scribed by V. Mikhelashvili; B. Meyler; M. Garbrecht; T. Cohen-Hyams; Y. Roizin; M. Lisiansky; W.D. Kaplan; Y. Salzman; G. Eisenstein


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
719 KB
Volume
88
Category
Article
ISSN
0167-9317

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