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The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

✍ Scribed by Sarikavak-Lisesivdin, B.; Lisesivdin, S.B.; Ozbay, E.


Book ID
125422036
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
474 KB
Volume
13
Category
Article
ISSN
1567-1739

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