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The effect of interatomic potentials on the molecular dynamics simulation of nanometric machining

โœ Scribed by Akinjide Oluwajobi; Xun Chen

Publisher
Institute of Automation, Chinese Academy of Sciences
Year
2011
Tongue
English
Weight
922 KB
Volume
8
Category
Article
ISSN
1476-8186

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Being able to accurately predict dopant profiles at sub-keV implant energies is critical for the microelectronic industry. Molecular Dynamics (MD), with its capability to account for multiple interactions as energy lowers, is an increasingly popular simulation method. We report our work on sub-keV i