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The effect of hydrogen pressure on resistivity and charge carrier concentration in FeTi and FeTi-Mn thin films

✍ Scribed by M. Singh

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 591 KB
Volume: 21
Category: Article
ISSN: 0360-3199
DOI: 10.1016/0360-3199(95)00075-5

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