## Abstract In this article, we propose the optimum design of a highly linear and efficient Doherty power amplifier (DPA) considering the soft turnβon effects of the GaN HEMT. To compensate for the soft turnβon characteristic and obtain an extended highβefficiency range, the DPA is designed with un
The effect of FET soft turn-on on a Doherty amplifier
β Scribed by Karla J. I. Smith; Kimberley W. Eccleston; Peter T. Gough; Stephen I. Mann
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 223 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
Abstract
A Doherty amplifier's theoretical gain and efficiency characteristics significantly exceed those achieved by practical simulations and implementations. Analysis and simulation demonstrates that the FET gate voltage to drain current transfer characteristic has a significant detrimental effect on these characteristics, indicating it is the major factor in the difference between ideal and practical results. Β© Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1861β1864, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23477
π SIMILAR VOLUMES
Figure 5 Convergence of the corrected diffraction coefficients f/')(w) to the exact pattern p,(w) of E = m as E increases from 2 to 1000 for 0, = 60", 8, = 300", and 0, = 330"
a), A. Vescan (a), A. Wieszt (a), H. Leier (a), K. S. Boutros (b), J. M. Redwing (b), K. Kornitzer (c), R. Freitag (c), T. Ebner (c), and K. Thonke (c)