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The effect of epitaxy conditions on the interface of GaAs/ZnSe heterojunctions

✍ Scribed by V.A. Kassyan; P.V. Gaugash; G.I. Tsurcan

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial growth and the conduction prop

✍ Mach, R. ;Ludwig, W. ;Eichhorn, G. ;Arnold, H. 📂 Article 📅 1970 🏛 John Wiley and Sons 🌐 English ⚖ 476 KB

Effects of ZnSe epitaxial growth on the

✍ Olego, D. J. 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 718 KB

Lattice strain near the interface of ZnS

✍ K. Imai; K. Kumazaki; T. Haga; T. Hondoh; Y. Abe 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Study of the band offset for ZnSe(100)Ga

✍ Yi Yang; Yukun Yang; Wangcheng Li; Wenming Li; Lei Yu; Xin Xiong; Shanli Wang; H 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 254 KB

Epitaxial growth of ZnSe on GaAs with th

✍ S. P. Suprun; V. N. Sherstyakova; E. V. Fedosenko 📂 Article 📅 2009 🏛 Springer 🌐 English ⚖ 191 KB

The interface transport properties of Ge

✍ L Esaki; W.E Howard; J Heer 📂 Article 📅 1964 🏛 Elsevier Science 🌐 English ⚖ 428 KB