𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers

✍ Scribed by Kourkoutas, C. D. ;Kovacs, B. ;Euthymiou, P. C. ;Szentpali, B. ;Somogyi, K. ;Banbury, P. C. ;Zardas, G. E.

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
167 KB
Volume
135
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of Defect Bands on the Electrical
Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs and Si
✍ Horváth, Zs. J. ;Gombia, E. ;Pal, D. ;Kovacsics, Cs. ;Capannese, G. ;Pintér, I. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 177 KB 👁 1 views

Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb

Determination of the Thickness of Chemic
Determination of the Thickness of Chemically Removed Thin Layers on GaAs VPE Structures
✍ K. Somogyi; M. Németh-Sallay; Á. Nemcsics 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 379 KB 👁 1 views

Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface dunng the device preparation processes, though the possible thinning o