✦ LIBER ✦
THE EFFECT OF DOPANT DOSE LOSS DURING ANNEALING ON HEAVILY DOPED SURFACE LAYERS OBTAINED BY RECOIL IMPLANTATION OF ANTIMONY IN SILICON
✍ Scribed by MESLI, M. N.; BENBAHI, B.; BOUAFIA, H.; BELMEKKI, M.; ABIDRI, B.; HIADSI, S.
- Book ID
- 120516140
- Publisher
- World Scientific Publishing Company
- Year
- 2013
- Tongue
- English
- Weight
- 278 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0218-625X
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