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The effect of composition and exposure to external factors on the electronic structure of amorphous silicon nitride in memory devices

✍ Scribed by E.P. Domashevskaya; V.N. Seleznev; E.N. Desyatirikova; V.A. Terekhov


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
387 KB
Volume
20
Category
Article
ISSN
0026-2692

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