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The Effect of Chemical States of Dopants on the Microstructures and Band Gaps of Metal-Doped ZrO2 Thin Films at Different Temperatures

โœ Scribed by Chang, Sue-min; Doong, Ruey-an

Book ID
111645515
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
135 KB
Volume
108
Category
Article
ISSN
0022-3654

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Photodarkening relaxation under light exposure of a-As 2 Se 3 amorphous films doped with 0.5 at.% of metals Sn, Mn, Sm or Dy and a-AsSe films doped with Sn up to 10.0 at.% Sn was studied in dependence on the impurity and thermal treating. Both factors reduce photodarkening and the degree of reductio