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The Effect of Ballistic Conduction Electrons on the Current–Voltage Characteristics of Thin-Film Bismuth-Based Cross-Shaped Microstructures

✍ Scribed by A. I. Il'in; L. I. Aparshina; S. V. Dubonos; B. N. Tolkunov

Book ID
110274244
Publisher
Springer
Year
2001
Tongue
English
Weight
121 KB
Volume
30
Category
Article
ISSN
1063-7397

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✍ S. Scheinert; G. Paasch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 332 KB

A model for the silicon-on-insulator field effect transistor in a thin layer is presented which is not restricted by the charge sheet assumption and does not omit the substrate voltage drop. It is based on full determination of all surface potentials of the onedimensional MISIS structure. Threshold