The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors

✍ Scribed by P.C. Juan; J.D. Jiang; W.C. Shih; J.Y.M. Lee

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 930 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.004