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The effect of an oxide layer on the ohmicity of contacts to amorphous silicon

✍ Scribed by KH Levin; R Weil; M Janai; B Pratt

Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
215 KB
Volume
33
Category
Article
ISSN
0042-207X

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Contact angle determinations were made to allow us to study the effect of the wavelength of illumination on the surface of hydrogenated amorphous silicon thin films. The films were prepared by the PECVD technique from pure silane under conditions which give good quality material. Advancing and reced