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The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs

✍ Scribed by S.A. Goodman; F.D. Auret; W.E. Meyer

Book ID
113285604
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
579 KB
Volume
90
Category
Article
ISSN
0168-583X

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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb