## Abstract F‐implantation concentration profile simulations were carried out and the influence of the ion fluence, implantation energy as well as the alloy composition were investigated. For alloys with Al contents between 40 and 50 at% the conditions to get the halogen effect were assessed by the
The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys
✍ Scribed by Yong Fu Zhu; Xing You Lang; Qing Jiang
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 198 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1616-301X
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✦ Synopsis
Abstract
Based on a model for the size‐dependent bandgap energy of low‐dimensional semiconductor compounds, the alloying effect on the bandgap of nanoscale semiconductors is modeled without any adjustable parameter. The model predicts not only a trend of increasing bandgap with decreasing nanocrystal size but also Végard¢s relationship between the bandgap and the alloy composition when the size drops close to twice that of the critical size for the nanocrystals. The model predictions agree with available experimental results for bandgap changes of pseudo‐binary IIB–VIB chalcogenide semiconductor nanocrystals.
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