The dynamic gradient freeze growth of (Ti + Zn) doped semi-insulating InP

✍ Scribed by E.M. Monberg; R.L. Barns; P.M. Bridenbaugh; H. Brown; A. Carter

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 380 KB
• Volume: 6
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(90)90110-w

✦ Synopsis

High quafity single crystals of semi-insulating bzP were grown by the electrodynamic gradient fi'eeze technique. The material is co-doped with the shallow acceptor zinc and the deep donor titanium. Resistivities in the 105-10 ~ g2 cm range were measured with corresponding mobilities of 2500 cm-' V J s 1. Variable temperature Hall measurements resulted in an activation energy 0.61 +_ 0.03 eV below the conduction band. The dislocation density is less than 500 cm--' and is the lowest ever reported for comparably sized semi-insulating InP bulk crystals. Precipitates containing titanium and phosphorus were found when the titanium concentration exceeded 3×101c' cm --~. A distribution coefficient of 4 x 10 4 was measured for titanium in InP. The precipitates have been identified for the first tinw as hexagonal TiP using X-ray powder diffraction.