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The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

✍ Scribed by H. S. Chao; P. B. Griffin; J. D. Plummer; C. S. Rafferty


Book ID
121843962
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
332 KB
Volume
69
Category
Article
ISSN
0003-6951

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