## Abstract A dislocation density dependence on crystal transverse dimensions has been investigated for crystals of Sb grown in split graphite moulds at rates of 1.5; 8.5 and 15 cm/h. The dependence is shown to be the same for all growth rates which agrees with an earlier suggested theoretical equa
โฆ LIBER โฆ
The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod
โ Scribed by G. Kh. Azhdarov; Z. M. Zeynalov; L. A. Huseynli
- Book ID
- 111438095
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2009
- Tongue
- English
- Weight
- 196 KB
- Volume
- 54
- Category
- Article
- ISSN
- 1063-7745
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## Abstract The influence of modulated crucible rotation on the axial distribution of Cu, Mg and Si impurities in proustite single crystals grown by the Stockbarger method using ACRT is studied in a wide range of Taylor numbers (1.9ยท10^5^ < __Ta__ < 7.12ยท10^7^). The impurity content in the upper pa