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The dip-dry technique for preparing photosensitive Sb2S3 films

✍ Scribed by B.B. Nayak; H.N. Acharya; T.K. Chaudhuri; G.B. Mitra

Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
249 KB
Volume
92
Category
Article
ISSN
0040-6090

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H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals