The development of Ti silicide on poly gate structures with oxidized sidewall and application in a novel RF LDMOSFET

✍ Scribed by X.X Qu; P.D Foo; S.M Xu

• Book ID: 104420590
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 96 KB
• Volume: 5
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(02)00043-4