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The development of an EDXRF technique for the determination of the stoichiometry and thickness of MOCVD grown epitaxial layers of Hg1−xCdxTe and a comparison with PIXE analysis

✍ Scribed by Peter N. Johnston; Salvy P. Russo; Robert C. Short; Scott R. Walker; Geoffrey N. Pain

No coin nor oath required. For personal study only.

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