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The determination of the energy position of the recombination level in the base of a diode obtained from heat-hardened silicon

✍ Scribed by S. A. Zaidman; V. I. Gaman; V. M. Osinenko; G. I. Zaidman


Book ID
112417090
Publisher
Springer
Year
1967
Tongue
English
Weight
228 KB
Volume
10
Category
Article
ISSN
1573-9228

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