The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

✍ Scribed by M.K. Lee; J.D. Song; J.S. Yu; Y.T. Lee; T.W. Kim

• Book ID: 114065852
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 199 KB
• Volume: 36
• Category: Article
• ISSN: 0025-5408
• DOI: 10.1016/s0025-5408(01)00667-5