The deep levels associated with vacancies and substitutional impurity atoms in \((\mathrm{Si})_{\mathrm{n}} /(\mathrm{Ge})_{\mathrm{m}}\) strained-layer superlattices (SLSLs) grown on \(\mathrm{Si}_{1-\mathrm{x}} \mathrm{Ge}_{\mathrm{x}}\) substrates are investigated theoretically. The band structur
โฆ LIBER โฆ
The deep levels in superlattices
โ Scribed by Ming-Zhu Huang; Yiming Gu; Xiangjun Shi; Shangyuan Ren
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 150 KB
- Volume
- 40-41
- Category
- Article
- ISSN
- 0022-2313
No coin nor oath required. For personal study only.
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