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The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

✍ Scribed by Aronov, D. A. ;Kabulov, R. ;Yuabov, Yu. M.

Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
389 KB
Volume
109
Category
Article
ISSN
0031-8965

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Excitation functions were measured by the stacked-foil technique for (p, xn) reactions up to EP = 20 MeV on natural tellurium and enriched '23Te. Thick target vields were calculated for the formation of '\*'I, "'I, iz41, '261, "'1 and "'1 from natural tellurium, andYZ21-and iz31 from enriched iz3Te.