Crossover from strong to weak localizati
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N. V. Agrinskaya; V. I. Kozub; D. V. Poloskin; A. V. Chernyaev; D. V. Shamshur
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Article
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2006
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John Wiley and Sons
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English
⚖ 219 KB
## Abstract A crossover from strongly localized behavior to weak localization (SL–WL) was observed in two‐dimensional modulation‐doped GaAs/Al~0.3~Ga~0.7~As structures as the impurity concentration increased. The low‐temperature dependence of the conductivity changed its character (from exponential