The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics
✍ Scribed by V. Mikhelashvili; P. Thangadurai; W.D. Kaplan; G. Eisenstein
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 657 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N ultra-thin (1 and 2 nm) films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. The current flow mechanism was analyzed on the basis of pre-breakdown, soft-breakdown and post-breakdown current-voltage (J-V) experiments. Based on a-V analysis (a ¼ d½lnðJÞ=d½lnðVÞ) of the J-V characteristics, a non-ideal Schottky diode-like current mechanism with different parameters in various ranges of J-V characteristics is established, which limits the current flow in these structures independent of irradiation dose or magnitude of applied voltage during stress.