Ballistic field-effect transistor with n
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Z. Gribnikov; N. Vagidov; A. Korshak; V. Mitin
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Article
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2000
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Elsevier Science
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English
β 124 KB
We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscilla