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The Completeness Relation and the Local Density Approximation for Layer Structures in Microelectronics

✍ Scribed by J. Kelber; Ch. Schnittler; G. Paasch

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
188 KB
Volume
122
Category
Article
ISSN
0370-1972

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## Abstract A new method is described for the self‐consistent calculation of electron and hole densities, band bending, and subband energies in inversion layers of MIS‐structures. This method makes use of new and simple expressions for carrier densities which take into account the influence of the