Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, currentยฑvoltage, and capacitanceยฑvoltage measurements in metalยฑsemiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb
The combined effects of lattice vibrations and irradiation-produced defects on dechanneling
โ Scribed by L.M. Howe; M.L. Swanson; A.F. Quenneville
- Publisher
- Elsevier Science
- Year
- 1976
- Weight
- 493 KB
- Volume
- 132
- Category
- Article
- ISSN
- 0029-554X
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