The collisional behaviour of electronically excited silicon atoms in the opticalIy metastable 3p2 (ID\*) state (0.781 eV) is imestigated by time-resolved resonance absorption in the ultraviolet. Si(3 '9) was generated by the repetitive pulsed irmdiation of Sic14 at & > 165 nm in a flow system, and m
The collisional quenching of electronically excited tin atoms Sn(51D2) by time-resolved atomic absorption spectroscopy
β Scribed by A. Brown; D. Husain
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 477 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0538-8066
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β¦ Synopsis
Abstraci
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A kinetic investigation of electronically excited arsenic atoms in the low-lying states, As(4ps ' 0 5 ) and As(4p3 2P~), ca. 1.33 and 2.28 eV, respectively, above the 44S312 ground state, has been carried out by atomic absorption spectroscopy. Atoms in these optically metastable states were generate
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## Abstract Electronically excited oxygen atoms O(2^1^__D__~2~) have been generated by the pulsed irradiation of ozone in the Hartleyβband continuum and monitored photoelectrically in absorption by timeβresolved attenuation of atomic resonance radiation at Ξ» = 115.2 nm [O(3^1^__D__~2~Β°) β O(2^1^__D