The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers

✍ Scribed by Mou-Shiung Lin

• Book ID: 114595110
• Publisher: IEEE
• Year: 1985
• Tongue: English
• Weight: 715 KB
• Volume: 32
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1985.22001