The characterisation of Bonded Silicon on Insulator (BSOI) structures using low temperature scanning cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS)
✍ Scribed by GM Williams; JP Newey; V Nayar
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 279 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
A number of BSOI structures, applicable to CMOS devices, were analysed, lnterfacial impurities and process generated defects, such as dislocations, are potentially detrimental to the electronic properties of these materials and analytical techniques which can reveal the presence of such problems are of vital importance. In this paper we present data which shows how CL and SIMS can combine to identify such problems. We have identified an interaction between the presence of boron and hydrogen species in the Si02 layer and also give evidence to suggest that the combination of electron beam exposure and thermal cycling can modify the electronic properties of the oxide.