The one-dimensional stationary full hydrodynamic model for semiconductor devices with non-isentropic pressure is studied. This model consists of the equations for the electron density, electron temperature, and electric field in a bounded domain supplemented with boundary conditions. The existence o
The Cauchy–Neumann problem for a multi-dimensional isentropic hydrodynamic model for semiconductors
✍ Scribed by Yeping Li
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 167 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0170-4214
- DOI
- 10.1002/mma.653
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✦ Synopsis
Abstract
We investigate a multi‐dimensional isentropic hydrodynamic (Euler–Poisson) model for semiconductors, where the energy equation is replaced by the pressure–density relation p(n) . We establish the global existence of smooth solutions for the Cauchy–Neumann problem with small perturbed initial data and homogeneous Neumann boundary conditions. We show that, as t→+∞, the solutions converge to the non‐constant stationary solutions of the corresponding drift–diffusion equations. Moreover, we also investigate the existence and uniqueness of the stationary solutions for the corresponding drift–diffusion equations. Copyright © 2005 John Wiley & Sons, Ltd.
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